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  1/8 september 2001 n standardized symmetrical output characteristics n medium speed operation t pd = 30ns (typ.) at 10v n quiescent current specified up to 20v n 5v, 10v and 15v parametric ratings n input leakage current i i = 100na (max) at v dd = 18v t a =25 c n 100% tested for quiescent current n meets all requirements of jedec jesd13b o standard specifications for description of b series cmos deviceso description the hcf4007ub is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in dip and sop packages. the hcf4007ub type is comprised of three n-channel and three p-channel enhancement type mos transistors. the transistor elements are accessible through the package terminals to provide a convenient means for constructing the various typical circuits as shown in typical applications. more complex functions are possible using multiple packages. number shown in parentheses indicate terminals that are connected together to form the various configuration listed. hcf4007ub dual complementary pair plus inverter pin connection order codes package tube t & r dip hcf4007ubey sop hcf4007ubm1 HCF4007UM013TR dip sop
hcf4007ub 2/8 input equivalent circuit logic diagram pin description absolute maximum ratings absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. all voltage values are referred to v ss pin voltage. recommended operating conditions pin no symbol name and function 2, 11 s p2 ,s p3 source connections to 2nd and 3rd p-channel transistors 13, 1 d p1 ,d p2 drain connections from the 1st and 2nd p-channel transistors 8, 5 d n1 ,d n2 drain connections from the 1st and 2nd n-channel transistors 4, 9 s n2 ,s n3 source connections to the 2nd and 3rd n-channel 12 d n/p3 common connection to the 3rd p-channel and n-channel transistor drains 6, 3, 10 g 1 to g 3 gate connections to n-channel and p-channel of the three transistor pairs 7 v ss negative supply voltage 14 v dd positive supply voltage symbol parameter value unit v dd supply voltage -0.5 to +22 v v i dc input voltage -0.5 to v dd + 0.5 v i i dc input current 10 ma p d power dissipation per package 200 mw power dissipation per output transistor 100 mw t op operating temperature -55 to +125 c t stg storage temperature -65 to +150 c symbol parameter value unit v dd supply voltage 3to20 v v i input voltage 0 to v dd v t op operating temperature -55 to 125 c
hcf4007ub 3/8 dc specifications the noise margin for both o1o and o0o level is: 1v min. with v dd =5v, 2v min. with v dd =10v, 2.5v min. with v dd =15v dynamic electrical characteristics (t amb =25 c, c l = 50pf, r l = 200k w ,t r =t f = 20 ns) (*) typical temperature coefficient for all v dd value is 0.3 %/ c. symbol parameter test condition value unit v i (v) v o (v) |i o | ( m a) v dd (v) t a =25 c -40 to 85 c -55 to 125 c min. typ. max. min. max. min. max. i l quiescent current 0/5 5 0.01 0.25 7.5 7.5 m a 0/10 10 0.01 0.5 15 15 0/15 15 0.01 1 30 30 0/20 20 0.02 5 150 150 v oh high level output voltage 0/5 <1 5 4.95 4.95 4.95 v 0/10 <1 10 9.95 9.95 9.95 0/15 <1 15 14.95 14.95 14.95 v ol low level output voltage 5/0 <1 5 0.05 0.05 0.05 v 10/0 <1 10 0.05 0.05 0.05 15/0 <1 15 0.05 0.05 0.05 v ih high level input voltage 0.5/4.5 <1 5 4 4 4 v 1/9 <1 10 8 8 8 1.5/13.5 <1 15 12.5 12.5 12.5 v il low level input voltage 4.5/0.5 <1 5 1 1 1 v 9/1 <1 10 2 2 2 13.5/1.5 <1 15 2.5 2.5 2.5 i oh output drive current 0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1 ma 0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36 0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9 0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4 i ol output sink current 0/5 0.4 <1 5 0.44 1 0.36 0.36 ma 0/10 0.5 <1 10 1.1 2.6 0.9 0.9 0/15 1.5 <1 15 3.0 6.8 2.4 2.4 i i input leakage current 0/18 any input 18 10 -5 0.1 1 1 m a c i input capacitance any input 5 7.5 pf symbol parameter test condition value (*) unit v dd (v) min. typ. max. t plh t phl propagation delay time 5 55 110 ns 10 30 60 15 25 50 t tlh t thl transition time 5 100 200 ns 10 50 100 15 40 80
hcf4007ub 4/8 typical applications triple inverters : (14, 2, 11); (8,13); (1, 5); (4, 7, 9) 3-input nand gate : (1, 12, 13); (2, 14, 11); (4, 8); (5, 9) 3-input nor gate : (13, 2); (1, 11); (12, 5, 8); (4, 7, 9) dual bidirectional trasmission gating : (1, 5, 12); (2, 9); (11, 4); (8,13,10); (6, 3)
hcf4007ub 5/8 test circuit c l = 50pf or equivalent (includes jig and probe capacitance) r l = 200k w r t =z out of pulse generator (typically 50 w ) waveform : propagation delay times (f=1mhz; 50% duty cycle)
hcf4007ub 6/8 dim. mm. inch min. typ max. min. typ. max. a1 0.51 0.020 b 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 d 20 0.787 e 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 f 7.1 0.280 i 5.1 0.201 l 3.3 0.130 z 1.27 2.54 0.050 0.100 plastic dip-14 mechanical data p001a
hcf4007ub 7/8 dim. mm. inch min. typ max. min. typ. max. a 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.5 0.019 c1 45 (typ.) d 8.55 8.75 0.336 0.344 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 f 3.8 4.0 0.149 0.157 g 4.6 5.3 0.181 0.208 l 0.5 1.27 0.019 0.050 m 0.68 0.026 s8 (max.) so-14 mechanical data po13g
hcf4007ub 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringe ment of patents or other righ ts of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this pub lication are subject to change without notice. thi s pub lication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authori zed for use as critical components in life suppo rt devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2001 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco singapore - spain - sweden - swit zerland - united kingdom ? http://w ww.st.com


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